ZXTP25040DFLTA, Trans GP BJT PNP 40V 1.5A 350mW 3-Pin SOT-23 T/R
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- Код товара
- 8001104074
- Артикул
- ZXTP25040DFLTA
- Бренд
- DIODES INC.
- HTS
- 8541.29.00.95
- Type
- PNP
- Brand:
- Diodes Incorporated
- EU RoHS
- Compliant
Цена по запросу
(от 33 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| HTS | 8541.29.00.95 |
| Type | PNP |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Series: | ZXTP250 |
| Military | No |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Subcategory: | Transistors |
| Корпус | SOT-23(TO-236) |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Package Width | 1.3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Package Height | 0.98 |
| Package Length | 2.9 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Product Category | Bipolar Power |
| Supplier Package | SOT-23 |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| AEC Qualified Number | AEC-Q101 |
| Transistor Polarity: | PNP |
| Standard Package Name | SOT-23 |
| Minimum DC Current Gain | 300@10mA@2V|120@1.5A@2V|15@3A@2V |
| Pd - Power Dissipation: | 350 mW |
| DC Current Gain hFE Max: | 300 at 10 mA, 2 V |
| Gain Bandwidth Product fT: | 270 MHz |
| Emitter- Base Voltage VEBO: | 7 V |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO: | 45 V |
| Maximum DC Collector Current: | 1.5 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 350 |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 120 |
| Maximum DC Collector Current (A) | 1.5 |
| Maximum Emitter Base Voltage (V) | 7 |
| Maximum Collector Base Voltage (V) | 45 |
| Maximum Transition Frequency (MHz) | 270(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 40 V |
| Collector-Emitter Saturation Voltage: | 245 mV |
| Maximum Collector-Emitter Voltage (V) | 40 |
| Maximum Base Emitter Saturation Voltage (V) | 1@75mA@1.5A |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3@300mA@3A|0.095@20mA@0.5A|0.29@20mA@1A|0.115@100mA@1A|0.19@75mA@1.5A |
| Максимально допустимый ток к ( Iк макс.А) | 1.5 |