ZXTP25012EZTA, Bipolar Transistors - BJT PNP 12V HIGH GAIN
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8006353164
- Артикул
- ZXTP25012EZTA
- Бренд
- DIODES INC.
- Brand:
- Diodes Incorporated
- Вес, г
- 0.05
- Technology:
- Si
- Subcategory:
- Transistors
Цена по запросу
(от 160 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Diodes Incorporated |
| Вес, г | 0.05 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | Diodes Incorporated |
| Package/Case: | SOT-89-3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity: | PNP |
| Factory Pack Quantity: | 1000 |
| Pd - Power Dissipation: | 19.2 W |
| DC Current Gain hFE Max: | 1500 at-10 mA, -2 V |
| Gain Bandwidth Product fT: | 310 MHz |
| Emitter- Base Voltage VEBO: | 7 V |
| Collector- Base Voltage VCBO: | 20 V |
| Continuous Collector Current: | -4.5 A |
| Maximum DC Collector Current: | 4.5 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hFE Min: | 40 at-4.5 A, -2 V |
| Collector- Emitter Voltage VCEO Max: | 12 V |
| Collector-Emitter Saturation Voltage: | 200 mV |