ZXTP2027FTA, 60V 1.2W 100@2A,2V 4A PNP SOT-23 BIpolar TransIstors - BJT
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- Код товара
- 8024877058
- Артикул
- ZXTP2027FTA
- Бренд
- DIODES INC.
- Brand:
- Diodes Incorporated
- Series:
- ZXTP2027
- Вес, г
- 0.02
- Technology:
- Si
Цена по запросу
(от 113,57 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Diodes Incorporated |
| Series: | ZXTP2027 |
| Вес, г | 0.02 |
| Technology: | Si |
| Subcategory: | Transistors |
| Корпус | SOT-23(TO-236) |
| Manufacturer: | Diodes Incorporated |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Transistor Type | PNP |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity: | PNP |
| Collector Current (Ic) | 4A |
| Power Dissipation (Pd) | 1.2W |
| Pd - Power Dissipation: | 1.56 W |
| DC Current Gain hFE Max: | 300 at-2 A, -2 V |
| Transition Frequency (fT) | 165MHz |
| Gain Bandwidth Product fT: | 165 MHz |
| Emitter- Base Voltage VEBO: | 7 V |
| DC Current Gain (hFE@Ic,Vce) | 100@2A, 2V |
| Collector- Base Voltage VCBO: | 100 V |
| Continuous Collector Current: | -4 A |
| Maximum DC Collector Current: | 4 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 20 at-10 A, -2 V |
| Collector Cut-Off Current (Icbo) | 20nA |
| Collector- Emitter Voltage VCEO Max: | 60 V |
| Collector-Emitter Saturation Voltage: | 155 mV |
| Collector-Emitter Breakdown Voltage (Vceo) | 60V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 155mV@4A, 200mA |
| Максимально допустимый ток к ( Iк макс.А) | 4 |