ZXTP07012EFFTA, 50nA 12V 840mW 210@6A,2V 4A 250MHz 260mV@4A,80mA PNP -55°C~+150°C@(Tj) SOT-23F BIpolar TransIstors - BJT
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017629571
- Артикул
- ZXTP07012EFFTA
- Бренд
- DIODES INC.
- Brand:
- Diodes Incorporated
- Вес, г
- 0.02
- Power - Max
- 1.5 W
- Technology:
- Si
Цена по запросу
(от 19 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
12 В 1,5 Вт 500 при 10 мА, 2 В 4 А биполярные транзисторы PNP SOT-23F - BJT ROHS
Технические параметры
| Brand: | Diodes Incorporated |
| Вес, г | 0.02 |
| Power - Max | 1.5 W |
| Technology: | Si |
| Subcategory: | Transistors |
| Корпус | SOT-23(TO-236) |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Package/Case: | SOT-23F-3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Package / Case | SOT-23-3 Flat Leads |
| Mounting Style: | SMD/SMT |
| Transistor Type | PNP |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity: | PNP |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Collector Current (Ic) | 4A |
| Factory Pack Quantity: | 3000 |
| Frequency - Transition | 250MHz |
| Power Dissipation (Pd) | 1.5W |
| Pd - Power Dissipation: | 2 W |
| Supplier Device Package | SOT-23F |
| DC Current Gain hFE Max: | 1500 at-10 mA, -2 V |
| Transition Frequency (fT) | 250MHz |
| Gain Bandwidth Product fT: | 250 MHz |
| Emitter- Base Voltage VEBO: | 7 V |
| DC Current Gain (hFE@Ic,Vce) | 500@10mA, 2V |
| Collector- Base Voltage VCBO: | 12 V |
| Continuous Collector Current: | -4 A |
| Maximum DC Collector Current: | 4 A |
| Vce Saturation (Max) @ Ib, Ic | 340mV @ 80mA, 4A |
| Current - Collector (Ic) (Max) | 4 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hFE Min: | 150 at-6 A, -2 V |
| Collector Cut-Off Current (Icbo) | 50nA |
| Current - Collector Cutoff (Max) | 50nA(ICBO) |
| Collector- Emitter Voltage VCEO Max: | 12 V |
| Collector-Emitter Saturation Voltage: | 260 mV |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 500 @ 10mA, 2V |
| Collector-Emitter Breakdown Voltage (Vceo) | 12V |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 260mV@4A, 80mA |
| Максимально допустимый ток к ( Iк макс.А) | 4 |
| Граничная частота коэффициента передачи тока fгр.МГц | 250 |