ZXTN4006ZTA,Bipolar (BJT) Single Transistor, NPN, 200 V, 1 A, 1.5 W, SOT-89, Surface Mount
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- Код товара
- 8044525809
- Артикул
- ZXTN4006ZTA
- Бренд
- DIODES INC.
- Tab
- Tab
- PPAP
- No
- Type
- NPN
- Brand:
- Diodes Incorporated
Цена по запросу
(от 150 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT NPN 200V 1A 1500 МВт 4-контактный(3+вкладки) SOT-89 T/R
Технические параметры
| Tab | Tab |
| PPAP | No |
| Type | NPN |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Series: | ZXTN4006 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | No |
| Lead Shape | Flat |
| Вес, г | 0.001 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Package Type | SOT-89 |
| Subcategory: | Transistors |
| Корпус | SOT-89/TO-243 |
| Configuration | Single Dual Collector |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-89-3 |
| Transistor Type | NPN |
| Product Category | Bipolar Power |
| Supplier Package | SOT-89 |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN |
| Standard Package Name | SOT |
| Minimum DC Current Gain | 60 85mA 0.25V|100 150mA 0.32V |
| Pd - Power Dissipation: | 1.5 W |
| DC Current Gain hFE Max: | 100 at 150 mA, 320 mV |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 1.5 W |
| Emitter- Base Voltage VEBO: | 7 V |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | 1 A |
| Maximum Emitter Base Voltage | 7 V |
| Collector- Base Voltage VCBO: | 200 V |
| Continuous Collector Current: | 1 A |
| Maximum DC Collector Current: | 1 A |
| Maximum Operating Temperature | +150 °C |
| Maximum Collector Base Voltage | 200 V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 1500 |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 60 at 85 mA, 250 mV |
| Maximum DC Collector Current (A) | 1 |
| Maximum Emitter Base Voltage (V) | 7 |
| Maximum Collector Emitter Voltage | 200 V |
| Maximum Collector Base Voltage (V) | 200 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 200 V |
| Maximum Collector-Emitter Voltage (V) | 200 |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Максимально допустимый ток к ( Iк макс.А) | 1 |