ZXTN25040DFLTA, Trans GP BJT NPN 130V 1.5A 350mW 3-Pin SOT-23 T/R
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- Код товара
- 8001141310
- Артикул
- ZXTN25040DFLTA
- Бренд
- DIODES INC.
- PPAP
- No
- Type
- NPN
- Brand:
- Diodes Incorporated
- EU RoHS
- Compliant
Цена по запросу
(от 27 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT NPN 130 В 1,5 А 350 МВт 3-контактный SOT-23 T/R
Технические параметры
| PPAP | No |
| Type | NPN |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Series: | ZXTN25040 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Package Type | SOT-23 |
| Subcategory: | Transistors |
| Корпус | SOT-23(TO-236) |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Transistor Type | NPN |
| Product Category | Bipolar Small Signal |
| Supplier Package | SOT-23 |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN |
| Standard Package Name | SOT |
| Minimum DC Current Gain | 300@10mA@2V|300@1A@2V|170@1.5A@2V|25@4A@2V |
| Pd - Power Dissipation: | 350 mW |
| DC Current Gain hFE Max: | 900 at 10 mA, 2 V |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 350 mW |
| Gain Bandwidth Product fT: | 190 MHz |
| Emitter- Base Voltage VEBO: | 7 V |
| Maximum Operating Frequency | 190 MHz |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | 1.5 A |
| Maximum Emitter Base Voltage | 7 V |
| Collector- Base Voltage VCBO: | 130 V |
| Continuous Collector Current: | 1.5 A |
| Maximum DC Collector Current: | 1.5 A |
| Maximum Operating Temperature | +150 °C |
| Maximum Collector Base Voltage | 130 V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 350 |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 25 at 4 A, 2 V |
| Maximum DC Collector Current (A) | 1.5 |
| Maximum Emitter Base Voltage (V) | 7 |
| Maximum Collector Emitter Voltage | 40 V |
| Maximum Collector Base Voltage (V) | 130 |
| Maximum Transition Frequency (MHz) | 190(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 40 V |
| Collector-Emitter Saturation Voltage: | 235 mV |
| Maximum Collector-Emitter Voltage (V) | 130 |
| Maximum Collector Cut-Off Current (nA) | 50 |
| Maximum Base Emitter Saturation Voltage (V) | 0.95@30mA@1.5A |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Максимально допустимый ток к ( Iк макс.А) | 1.5 |