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ZXTN25020DGTA, Bipolar Transistors - BJT NPN 20V HIGH GAIN

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Код товара
8004613652
Артикул
ZXTN25020DGTA
Бренд
DIODES INC.
Brand:
Diodes Incorporated
Series:
ZXTN250
Вес, г
0.11
Power - Max
3 W
Цена по запросу
(от 125,74 ₽)

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Описание

Биполярный (BJT) транзистор NPN 20 В 7 А 215 МГц 3 Вт для поверxностного монтажа SOT-223-3

Технические параметры

Brand:Diodes Incorporated
Series:ZXTN250
Вес, г0.11
Power - Max3 W
Technology:Si
Subcategory:Transistors
Manufacturer:Diodes Incorporated
Mounting TypeSurface Mount
Product Type:BJTs-Bipolar Transistors
Configuration:Single
Package / CaseTO-261-4, TO-261AA
Mounting Style:SMD/SMT
Package / Case:SOT-223-4
Transistor TypeNPN
Product Category:Bipolar Transistors-BJT
Структураnpn
Transistor Polarity:NPN
Operating Temperature-55°C ~ 150°C(TJ)
Collector Current (Ic)7A
Frequency - Transition215MHz
Power Dissipation (Pd)3W
Pd - Power Dissipation:3 W
Supplier Device PackageSOT-223-3
DC Current Gain hFE Max:300
Transition Frequency (fT)215MHz
Gain Bandwidth Product fT:215 MHz
Emitter- Base Voltage VEBO:7 V
DC Current Gain (hFE@Ic,Vce)300@10mA, 2V
Collector- Base Voltage VCBO:100 V
Maximum DC Collector Current:7 A
Vce Saturation (Max) @ Ib, Ic290mV @ 700mA, 7A
Current - Collector (Ic) (Max)7 A
Maximum Operating Temperature:+150 C
Minimum Operating Temperature:-55 C
DC Collector/Base Gain hfe Min:300 at 10 mA, 2 V, 250 at 2 A, 2 V, 50 at 7 A, 2 V
Collector Cut-Off Current (Icbo)50nA
Current - Collector Cutoff (Max)50nA(ICBO)
Collector- Emitter Voltage VCEO Max:20 V
Collector-Emitter Saturation Voltage:225 mV
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 10mA, 2V
Collector-Emitter Breakdown Voltage (Vceo)20V
Voltage - Collector Emitter Breakdown (Max)20 V
Factory Pack Quantity: Factory Pack Quantity:1000
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)220mV@7A, 700mA

Техническая документация