ZXTN25012EFLTA, Транзистор биполярный BJT 50 нА 12 В 350мВт 55 при 15 А, 2 В 2 А 260 МГц 230 мВ при 5 А, 100 мА NPN -55°C+150°C@(Tj) SOT-23
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8069057919
- Артикул
- ZXTN25012EFLTA
- Бренд
- DIODES INC.
- PPAP
- No
- Type
- NPN
- Brand:
- Diodes Incorporated
- EU RoHS
- Compliant
Цена по запросу
(от 17 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание 50nA 12V 350mW 55@15A,2V 2A 260MHz 230mV@5A,100mA NPN -55°C~+150°C@(Tj) SOT-23 BIpolar TransIstors - BJT
Технические параметры
| PPAP | No |
| Type | NPN |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Series: | ZXTN250 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 10 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Package Type | SOT-23 |
| Subcategory: | Transistors |
| Корпус | SOT-23(TO-236) |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Transistor Type | NPN |
| Product Category | Bipolar Small Signal |
| Supplier Package | SOT-23 |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN |
| Standard Package Name | SOT-23 |
| Minimum DC Current Gain | 500 |
| Pd - Power Dissipation: | 350 mW |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 350 mW |
| Gain Bandwidth Product fT: | 260 MHz |
| Emitter- Base Voltage VEBO: | 7 V |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | 2 A |
| Maximum Emitter Base Voltage | 7 V |
| Collector- Base Voltage VCBO: | 20 V |
| Maximum DC Collector Current: | 2 A |
| Maximum Operating Temperature | +150 °C |
| Maximum Collector Base Voltage | 20 V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 350 |
| Minimum Operating Temperature: | -55 C |
| Maximum DC Collector Current (A) | 2 |
| Maximum Emitter Base Voltage (V) | 7 |
| Maximum Collector Emitter Voltage | 12 V |
| Maximum Collector Base Voltage (V) | 20 |
| Maximum Transition Frequency (MHz) | 260(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 12 V |
| Collector-Emitter Saturation Voltage: | 235 mV |
| Maximum Collector-Emitter Voltage (V) | 12 |
| Maximum Base Emitter Saturation Voltage (V) | 0.95 40mA 2A |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Максимальная рассеиваемая мощность ,Вт | 350мВт |
| Граничная частота коэффициента передачи тока fгр.МГц | 260 |