ZXTN25012EFHTA, 12V 1.25W 500@10mA,2V 6A NPN SOT-23 BIpolar TransIstors - BJT
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- Код товара
- 8024882358
- Артикул
- ZXTN25012EFHTA
- Бренд
- DIODES INC.
- PPAP
- No
- Type
- NPN
- Brand:
- Diodes Incorporated
- EU RoHS
- Compliant
Цена по запросу
(от 15,17 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| PPAP | No |
| Type | NPN |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Series: | ZXTN250 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.04 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Subcategory: | Transistors |
| Корпус | SOT-23(TO-236) |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Package Width | 1.4(Max) |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Package Length | 3.04(Max) |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| EDA / CAD Models | ZXTN25012EFHTA by Ultra Librarian |
| Product Category | Bipolar Power |
| Supplier Package | SOT-23 |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN |
| Standard Package Name | SOT |
| Minimum DC Current Gain | 40@15A@2V|300@4A@2V|500@1A@2V|500@10mA@2V |
| Pd - Power Dissipation: | 1.25 W |
| DC Current Gain hFE Max: | 500 at 10 mA, 2 V |
| Gain Bandwidth Product fT: | 260 MHz |
| Emitter- Base Voltage VEBO: | 7 V |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO: | 20 V |
| Continuous Collector Current: | 6 A |
| Maximum DC Collector Current: | 6 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 1810 |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 500 |
| Maximum DC Collector Current (A) | 6 |
| Maximum Emitter Base Voltage (V) | 7 |
| Maximum Collector Base Voltage (V) | 20 |
| Maximum Transition Frequency (MHz) | 260(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 12 V |
| Collector-Emitter Saturation Voltage: | 160 mV |
| Maximum Collector-Emitter Voltage (V) | 12 |
| Maximum Base Emitter Saturation Voltage (V) | 1@120mA@6A |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.032@100mA@1A|0.055@10mA@1A|0.075@40mA@2A|0.19@120mA@6A |
| Максимально допустимый ток к ( Iк макс.А) | 6 |