ZXTN2031FTA, Trans GP BJT NPN 50V 5A 1560mW 3-Pin SOT-23 T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8023203363
- Артикул
- ZXTN2031FTA
- Бренд
- DIODES INC.
- PPAP
- No
- Type
- NPN
- Brand:
- Diodes Incorporated
- EU RoHS
- Compliant
Цена по запросу
(от 72 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT NPN 50V 5A 1560 МВт 3-контактный SOT-23 T/R
Технические параметры
| PPAP | No |
| Type | NPN |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Series: | ZXTN2031 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Package Type | SOT-23 |
| Subcategory: | Transistors |
| Корпус | sot23 |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Transistor Type | NPN |
| Product Category | Bipolar Power |
| Supplier Package | SOT-23 |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN |
| Standard Package Name | SOT |
| Minimum DC Current Gain | 190 10mA 2V|200 500mA 2V|200 2A 2V|80 5A 2V |
| Pd - Power Dissipation: | 1 W |
| DC Current Gain hFE Max: | 190 at 10 mA, 2 V |
| Maximum Base Current (A) | 1.2 |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 1.56 W |
| Gain Bandwidth Product fT: | 125 MHz |
| Emitter- Base Voltage VEBO: | 7 V |
| Maximum Operating Frequency | 125 MHz |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | 5 A |
| Maximum Emitter Base Voltage | 7 V |
| Collector- Base Voltage VCBO: | 80 V |
| Continuous Collector Current: | 4.5 A |
| Maximum DC Collector Current: | 5 A |
| Maximum Operating Temperature | +150 °C |
| Maximum Collector Base Voltage | 80 V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 1560 |
| Minimum Operating Temperature: | -55 C |
| Maximum DC Collector Current (A) | 5 |
| Maximum Emitter Base Voltage (V) | 7 |
| Maximum Collector Emitter Voltage | 50 V |
| Maximum Collector Base Voltage (V) | 80 |
| Maximum Transition Frequency (MHz) | 125(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 50 V |
| Operating Junction Temperature (°C) | -55 to 150 |
| Collector-Emitter Saturation Voltage: | 135 mV |
| Maximum Collector-Emitter Voltage (V) | 50 |
| Maximum Collector Cut-Off Current (nA) | 20 |
| Maximum Base Emitter Saturation Voltage (V) | 0.9 40mA 2A|1 250mA 5A |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |