ZXTN2020FTA, 100V 1.2W 4A NPN SOT-23 Bipolar Transistors - BJT
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- Код товара
- 8017625858
- Артикул
- ZXTN2020FTA
- Бренд
- DIODES INC.
- Brand
- Diodes Incorporated
- Brand:
- Diodes Incorporated
- Series
- ZXTN202
- Series:
- ZXTN202
Цена по запросу
(от 141,89 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand | Diodes Incorporated |
| Brand: | Diodes Incorporated |
| Series | ZXTN202 |
| Series: | ZXTN202 |
| Packaging | Cut Tape or Reel |
| Pin Count | 3 |
| Вес, г | 0.02 |
| Subcategory | Transistors |
| Technology: | Si |
| Manufacturer | Diodes Incorporated |
| Package Type | SOT-23 |
| Product Type | BJTs-Bipolar Transistors |
| Subcategory: | Transistors |
| Корпус | SOT-23(TO-236) |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Transistor Type | NPN |
| Product Category | Bipolar Transistors-BJT |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity | NPN |
| Transistor Polarity: | NPN |
| Factory Pack Quantity | 3000 |
| Pd - Power Dissipation | 1560 mW |
| Minimum DC Current Gain | 100 |
| Pd - Power Dissipation: | 1.2 W |
| Transistor Configuration | Single |
| Gain Bandwidth Product FT | 130 MHz |
| Maximum Power Dissipation | 1.56 W |
| Emitter- Base Voltage VEBO | 7 V |
| Gain Bandwidth Product fT: | 130 MHz |
| Emitter- Base Voltage VEBO: | 7 V |
| Maximum Operating Frequency | 130 MHz |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO | 160 V |
| Maximum DC Collector Current | 4 A |
| Maximum Emitter Base Voltage | 7 V |
| Collector- Base Voltage VCBO: | 160 V |
| Maximum DC Collector Current: | 4 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Maximum Collector Base Voltage | 160 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Maximum Collector Emitter Voltage | 100 V |
| Collector- Emitter Voltage VCEO Max | 100 V |
| Collector- Emitter Voltage VCEO Max: | 100 V |
| Collector-Emitter Saturation Voltage: | 120 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Максимально допустимый ток к ( Iк макс.А) | 4 |