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ZXTN2010GTA, Bipolar Transistors - BJT 60V NPN Low Sat

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Код товара
8004842095
Артикул
ZXTN2010GTA
Бренд
DIODES INC.
Brand:
Diodes Incorporated
Series:
ZXTN2010
Pin Count
3+Tab
Вес, г
0.11
Цена по запросу
(от 220 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Описание Транзистор NPN 60В 6A 1,6Вт 130МГц SOT223 Характеристики Категория Транзистор Тип биполярный Вид NPN

Технические параметры

Brand:Diodes Incorporated
Series:ZXTN2010
Pin Count3+Tab
Вес, г0.11
Technology:Si
Package TypeSOT-223(SC-73)
Subcategory:Transistors
Manufacturer:Diodes Incorporated
Mounting TypeSurface Mount
Product Type:BJTs-Bipolar Transistors
Configuration:Single
Mounting Style:SMD/SMT
Package / Case:SOT-223-4
Transistor TypeNPN
Product Category:Bipolar Transistors-BJT
Структураnpn
Transistor Polarity:NPN
Collector Current (Ic)6A
Power Dissipation (Pd)3W
Minimum DC Current Gain100
Pd - Power Dissipation:3 W
Transistor ConfigurationSingle
Maximum Power Dissipation3 W
Transition Frequency (fT)130MHz
Gain Bandwidth Product fT:130 MHz
Emitter- Base Voltage VEBO:7 V
Maximum Operating Frequency130 MHz
Number of Elements per Chip1
DC Current Gain (hFE@Ic,Vce)100@2A, 1V
Maximum DC Collector Current6 A
Maximum Emitter Base Voltage7 V
Collector- Base Voltage VCBO:150 V
Continuous Collector Current:6 A
Maximum DC Collector Current:6 A
Maximum Operating Temperature+150 °C
Maximum Collector Base Voltage150 V
Maximum Operating Temperature:+150 C
Minimum Operating Temperature:-55 C
Collector Cut-Off Current (Icbo)50nA
Maximum Collector Emitter Voltage60 V
Collector- Emitter Voltage VCEO Max:60 V
Collector-Emitter Saturation Voltage:210 mV
Collector-Emitter Breakdown Voltage (Vceo)60V
Factory Pack Quantity: Factory Pack Quantity:1000
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)210mV@6A, 300mA

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