ZXTN2010GTA, Bipolar Transistors - BJT 60V NPN Low Sat

Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004842095
- Артикул
- ZXTN2010GTA
- Бренд
- DIODES INC.
- Brand:
- Diodes Incorporated
- Series:
- ZXTN2010
- Pin Count
- 3+Tab
- Вес, г
- 0.11
Цена по запросу
(от 220 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор NPN 60В 6A 1,6Вт 130МГц SOT223 Характеристики Категория Транзистор Тип биполярный Вид NPN
Технические параметры
| Brand: | Diodes Incorporated |
| Series: | ZXTN2010 |
| Pin Count | 3+Tab |
| Вес, г | 0.11 |
| Technology: | Si |
| Package Type | SOT-223(SC-73) |
| Subcategory: | Transistors |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-223-4 |
| Transistor Type | NPN |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN |
| Collector Current (Ic) | 6A |
| Power Dissipation (Pd) | 3W |
| Minimum DC Current Gain | 100 |
| Pd - Power Dissipation: | 3 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 3 W |
| Transition Frequency (fT) | 130MHz |
| Gain Bandwidth Product fT: | 130 MHz |
| Emitter- Base Voltage VEBO: | 7 V |
| Maximum Operating Frequency | 130 MHz |
| Number of Elements per Chip | 1 |
| DC Current Gain (hFE@Ic,Vce) | 100@2A, 1V |
| Maximum DC Collector Current | 6 A |
| Maximum Emitter Base Voltage | 7 V |
| Collector- Base Voltage VCBO: | 150 V |
| Continuous Collector Current: | 6 A |
| Maximum DC Collector Current: | 6 A |
| Maximum Operating Temperature | +150 °C |
| Maximum Collector Base Voltage | 150 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Collector Cut-Off Current (Icbo) | 50nA |
| Maximum Collector Emitter Voltage | 60 V |
| Collector- Emitter Voltage VCEO Max: | 60 V |
| Collector-Emitter Saturation Voltage: | 210 mV |
| Collector-Emitter Breakdown Voltage (Vceo) | 60V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 210mV@6A, 300mA |