ZXTN19100CGTA,Bipolar (BJT) Single Transistor, NPN, 100 V, 5.5 A, 3 W, SOT-223, Surface Mount
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- Код товара
- 8044525804
- Артикул
- ZXTN19100CGTA
- Бренд
- DIODES INC.
- Brand:
- Diodes Incorporated
- Series:
- ZXTN191
- Вес, г
- 0.001
- Technology:
- Si
Цена по запросу
(от 280 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
ZXTN19100CGTA, биполярные транзисторы - BJT NPN 100 В 5,5А
Технические параметры
| Brand: | Diodes Incorporated |
| Series: | ZXTN191 |
| Вес, г | 0.001 |
| Technology: | Si |
| Subcategory: | Transistors |
| Корпус | SOT-223 |
| Manufacturer: | Diodes Incorporated |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-223-4 |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN |
| Pd - Power Dissipation: | 3 W |
| DC Current Gain hFE Max: | 200 |
| Gain Bandwidth Product fT: | 150 MHz |
| Emitter- Base Voltage VEBO: | 7 V |
| Collector- Base Voltage VCBO: | 200 V |
| Maximum DC Collector Current: | 5.5 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 200 at 100 mA, 2 V, 130 at 1 A, 2 V |
| Collector- Emitter Voltage VCEO Max: | 100 V |
| Collector-Emitter Saturation Voltage: | 245 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |