Diodes Inc ZXTN19100CFFTA NPN Transistor, 4.5 A, 100 V, 3-Pin SOT-23F
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- Код товара
- 8010429628
- Артикул
- ZXTN19100CFFTA
- Бренд
- DIODES INC.
- Case
- SOT23F
- Brand
- Diodes Incorporated
- Brand:
- Diodes Incorporated
- Series
- ZXTN19100
Цена по запросу
(от 161,69 ₽)
Минимальный заказ: 10 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Case | SOT23F |
| Brand | Diodes Incorporated |
| Brand: | Diodes Incorporated |
| Series | ZXTN19100 |
| Series: | ZXTN19100 |
| Mounting | SMD |
| Frequency | 150MHz |
| Packaging | Cut Tape or Reel |
| Pin Count | 3 |
| Вес, г | 5 |
| Subcategory | Transistors |
| Technology: | Si |
| Current gain | 200…500 |
| Manufacturer | Diodes Incorporated |
| Package Type | SOT-23F |
| Polarisation | bipolar |
| Product Type | BJTs-Bipolar Transistors |
| Subcategory: | Transistors |
| Корпус | SOT-23(TO-236) |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23F-3 |
| Kind of package | reel, tape |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23F-3 |
| Transistor Type | NPN |
| Product Category | Bipolar Transistors-BJT |
| Collector current | 4.5A |
| Power dissipation | 0.84W |
| Product Category: | Bipolar Transistors-BJT |
| Type of transistor | NPN |
| Структура | npn |
| Transistor Polarity | NPN |
| Transistor Polarity: | NPN |
| Factory Pack Quantity | 3000 |
| Pd - Power Dissipation | 16 W |
| DC Current Gain HFE Max | 500 |
| Minimum DC Current Gain | 200 |
| Pd - Power Dissipation: | 2 W |
| DC Current Gain hFE Max: | 500 |
| Transistor Configuration | Single |
| Collector-emitter voltage | 100V |
| Gain Bandwidth Product FT | 150 MHz |
| Maximum Power Dissipation | 2 W |
| Emitter- Base Voltage VEBO | 7 V |
| Gain Bandwidth Product fT: | 150 MHz |
| Emitter- Base Voltage VEBO: | 7 V |
| Maximum Operating Frequency | 150 MHz |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO | 200 V |
| Continuous Collector Current | 4.5 A |
| Maximum DC Collector Current | 4.5 A |
| Maximum Emitter Base Voltage | 7 V |
| Collector- Base Voltage VCBO: | 200 V |
| Continuous Collector Current: | 4.5 A |
| Maximum DC Collector Current: | 4.5 A |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 C |
| DC Collector/Base Gain Hfe Min | 200 |
| Maximum Collector Base Voltage | 200 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 200 |
| Maximum Collector Emitter Voltage | 100 V |
| Collector- Emitter Voltage VCEO Max | 100 V |
| Collector- Emitter Voltage VCEO Max: | 100 V |
| Collector-Emitter Saturation Voltage | 60 mV |
| Collector-Emitter Saturation Voltage: | 170 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |