ZXTN07012EFFTA, Bipolar Transistors - BJT NPN 12V HIGH GAIN
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- Код товара
- 8005061244
- Артикул
- ZXTN07012EFFTA
- Бренд
- DIODES INC.
- Brand:
- Diodes Incorporated
- Вес, г
- 36
- Technology:
- Si
- Subcategory:
- Transistors
Цена по запросу
(от 92,36 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Diodes Incorporated |
| Вес, г | 36 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | Diodes Incorporated |
| Package/Case: | SOT-23F-3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 2 W |
| DC Current Gain hFE Max: | 500 |
| Gain Bandwidth Product fT: | 220 MHz |
| Emitter- Base Voltage VEBO: | 7 V |
| Collector- Base Voltage VCBO: | 20 V |
| Maximum DC Collector Current: | 4.5 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hFE Min: | 500 at 100 mA, 2 V, 400 at 2 A, 2 V, 330 at 4.5 A, 2 V, 140 at 10 A, 2 V |
| Collector- Emitter Voltage VCEO Max: | 12 V |
| Collector-Emitter Saturation Voltage: | 215 mV |