ZXTD09N50DE6TA, Trans GP BJT NPN 50V 1A 1700mW 6-Pin SOT-26 T/R
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- Код товара
- 8001218936
- Артикул
- ZXTD09N50DE6TA
- Бренд
- DIODES INC.
- Brand:
- Diodes Incorporated
- Вес, г
- 1
- Technology:
- Si
- Subcategory:
- Transistors
Цена по запросу
(от 110 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Diodes Incorporated |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | Diodes Incorporated |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-26-6 |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 900 mW |
| DC Current Gain hFE Max: | 200 at 10 mA, 2 V |
| Gain Bandwidth Product fT: | 215 MHz |
| Emitter- Base Voltage VEBO: | 7 V |
| Collector- Base Voltage VCBO: | 50 V |
| Continuous Collector Current: | 1 A |
| Maximum DC Collector Current: | 1 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 200 at 10 mA, 2 V, 300 at 100 mA, 2 V, 200 at 500 mA, 2 V, 75 at 1 A, 2 V, 20 at 1.5 A, 2 V |
| Collector- Emitter Voltage VCEO Max: | 50 V |
| Collector-Emitter Saturation Voltage: | 160 mV |