ZXTC2062E6TA, Bipolar Transistors - BJT 20V 1A Complementary Med power transisto
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- Код товара
- 8007355398
- Артикул
- ZXTC2062E6TA
- Бренд
- DIODES INC.
- Brand:
- Diodes Incorporated
- Series:
- ZXTC2062
- Вес, г
- 0.01
- Technology:
- Si
Цена по запросу
(от 163 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Diodes Incorporated |
| Series: | ZXTC2062 |
| Вес, г | 0.01 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | Diodes Incorporated |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-26-6 |
| Transistor Type | NPN+PNP |
| Product Category: | Bipolar Transistors-BJT |
| Transistor Polarity: | NPN, PNP |
| Collector Current (Ic) | 4A;3.5A |
| Power Dissipation (Pd) | 1.1W |
| Pd - Power Dissipation: | 1.7 W |
| DC Current Gain hFE Max: | 300 at 10 mA, 2 V |
| Transition Frequency (fT) | 215MHz;290MHz |
| Gain Bandwidth Product fT: | 215 MHz, 290 MHz |
| Emitter- Base Voltage VEBO: | 7 V |
| DC Current Gain (hFE@Ic,Vce) | 280@1A, 2V;170@1A, 2V |
| Collector- Base Voltage VCBO: | 100 V, 25 V |
| Maximum DC Collector Current: | 4 A, 3.5 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Collector Cut-Off Current (Icbo) | 50nA |
| Collector- Emitter Voltage VCEO Max: | 20 V |
| Collector-Emitter Saturation Voltage: | 140 mV, 190 mV |
| Collector-Emitter Breakdown Voltage (Vceo) | 20V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 140mV@4A, 200mA;190mV@3.5A, 175mA |