ZXMN6A07FTA, Транзистор N-MOSFET, полевой, 60В, 1,1А, 0,806Вт, SOT23
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- Код товара
- 8021948701
- Артикул
- ZXMN6A07FTA
- Бренд
- DIODES INC.
- PPAP
- No
- Width
- 1.4mm
- Brand:
- Diodes Incorporated
- EU RoHS
- Compliant
Цена по запросу
(от 37,75 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-MOSFET, полевой, 60В, 1,1А, 0,806Вт, SOT23 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| PPAP | No |
| Width | 1.4mm |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 2 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 1.4 ns |
| Вес, г | 0.05 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOT-23 |
| Subcategory: | MOSFETs |
| Корпус | sot23 |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Product Category | Small Signal |
| Supplier Package | SOT-23 |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 3.2 nC |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 2 |
| Typical Rise Time (ns) | 1.4 |
| Особенности | - |
| Pd - Power Dissipation: | 806 mW |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 806 mW |
| Typical Gate Charge @ Vgs | 3.2 nC 10 V |
| Supplier Temperature Grade | Automotive |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 1.8 ns |
| Maximum Drain Source Voltage | 60 V |
| Typical Turn-Off Delay Time: | 4.9 ns |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Id - Continuous Drain Current: | 1.4 A |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 806 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 3.2 |
| Typical Gate Charge @ Vgs (nC) | 1.65@5V|3.2@10V |
| Forward Transconductance - Min: | 2.3 S |
| Maximum Drain Source Resistance | 450 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 19.5 |
| Typical Turn-On Delay Time (ns) | 1.8 |
| Maximum Continuous Drain Current | 1.2 A |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Gate Plateau Voltage (V) | 4 |
| Typical Turn-Off Delay Time (ns) | 4.9 |
| Maximum Diode Forward Voltage (V) | 0.95 |
| Rds On - Drain-Source Resistance: | 250 mOhms |
| Typical Diode Forward Voltage (V) | 0.8 |
| Typical Gate to Drain Charge (nC) | 0.82 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Gate to Source Charge (nC) | 0.67 |
| Typical Reverse Recovery Time (ns) | 20.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 1.2 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 166@40V |
| Typical Reverse Recovery Charge (nC) | 21.3 |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Maximum Drain Source Resistance (mOhm) | 250@10V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 6.9 |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 0.806 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 8.7@40V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 1.2 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 200 |
| Пороговое напряжение на затворе | 1…2.5 В |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 6 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.806 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |