ZXMN2F34FHTA, MOSFETs 20V N-Channel Enhance. Mode MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004842006
- Артикул
- ZXMN2F34FHTA
- Бренд
- DIODES INC.
- PPAP
- No
- Width
- 1.4mm
- Brand:
- Diodes Incorporated
- EU RoHS
- Compliant
Цена по запросу
(от 66,53 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-MOSFET, полевой, 20В, 2,9А, 0,95Вт, SOT23 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| PPAP | No |
| Width | 1.4mm |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Series: | ZXMN2F34 |
| Mounting | Surface Mount |
| Product: | MOSFET Small Signal |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 5.1 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 4.2 ns |
| Вес, г | 0.01 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOT-23 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Product Category | Power MOSFET |
| Supplier Package | SOT-23 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 2.8 nC |
| Process Technology | TMOS |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 5.1 |
| Typical Rise Time (ns) | 4.2 |
| Особенности | - |
| Pd - Power Dissipation: | 950 mW |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 1.4 W |
| Typical Gate Charge @ Vgs | 2.8 nC @ 4.5 V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 2.65 ns |
| Maximum Drain Source Voltage | 20 V |
| Typical Turn-Off Delay Time: | 9.9 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 4 A |
| Maximum Gate Threshold Voltage | 1.5V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 1400 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 2.8 |
| Typical Gate Charge @ Vgs (nC) | 2.8@10V |
| Forward Transconductance - Min: | 7.5 S |
| Maximum Drain Source Resistance | 120 mΩ |
| Maximum Gate Source Voltage (V) | ±12 |
| Typical Turn-On Delay Time (ns) | 2.65 |
| Maximum Continuous Drain Current | 4 A |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 9.9 |
| Rds On - Drain-Source Resistance: | 60 mOhms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3.4 |
| Typical Input Capacitance @ Vds (pF) | 277@10V |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Maximum Drain Source Resistance (mOhm) | 60@4.5V |
| Vgs th - Gate-Source Threshold Voltage: | 500 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Пороговое напряжение на затворе | -12 V, +12 V |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 60 mOhms |