ZXMN2B03E6TA, 20V 4.3A 40mOhm@4.5V,4.3A 1.1W 1V@250uA N Channel SOT-26 MOSFETs
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062324026
- Артикул
- ZXMN2B03E6TA
- Бренд
- DIODES INC.
- Type
- 1PCSNChannel
- Brand:
- Diodes Incorporated
- Product:
- MOSFET Small Signals
- Fall Time:
- 6.2 ns
Цена по запросу
(от 164,29 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
20 В 4,3 А 40mOhm@4.5V,4,3 А 1,1 Вт 1 В при 250 мкА 1 шт. канальныx МОП-транзисторов SOT-23-6 ROHS
Технические параметры
| Type | 1PCSNChannel |
| Brand: | Diodes Incorporated |
| Product: | MOSFET Small Signals |
| Fall Time: | 6.2 ns |
| Rise Time: | 6.2 ns |
| Вес, г | 0.03 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Diodes Incorporated |
| Package/Case: | SOT-26-6 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 14.5 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Factory Pack Quantity: | 3000 |
| Power Dissipation (Pd) | 1.1W |
| Pd - Power Dissipation: | 1.7 W |
| Total Gate Charge (Qg@Vgs) | 14.5nC@4.5V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Typical Turn-On Delay Time: | 4.2 ns |
| Input Capacitance (Ciss@Vds) | 1.16nF@10V |
| Typical Turn-Off Delay Time: | 33.9 ns |
| Continuous Drain Current (Id) | 4.3A |
| Id - Continuous Drain Current: | 5.4 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 40 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |