ZXMN2B01FTA, Trans MOSFET N-CH 20V 2.1A 3-Pin SOT-23 T/R

Name: ZXMN2B01FTA, Trans MOSFET N-CH 20V 2.1A 3-Pin SOT-23 T/R
Brand: DIODES INC.
SKU: 8001281466

Изображения служат только для ознакомления, см. техническую документацию

Цена по запросу

(от 41 ₽)

Минимальный заказ: 3000 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

N-канальный 20 В 2,1 А (Ta) 625 МВт (Ta) для поверxностного монтажа SOT-23-3

ECCN	EAR99
HTSUS	8541.21.0095
Width	1.4mm
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
FET Type	N-Channel
Pin Count	3
Vgs (Max)	В±8V
Technology	MOSFET (Metal Oxide)
Вес, г	1
RoHS Status	ROHS3 Compliant
Channel Mode	Enhancement
Channel Type	N
Package Type	SOT-23
REACH Status	REACH Unaffected
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ Id	1V @ 250ВµA
Transistor Material	Si
Operating Temperature	-55В°C ~ 150В°C (TJ)
Power Dissipation (Pd)	625mW
Rds On (Max) @ Id, Vgs	100mOhm @ 2.4A, 4.5V
Power Dissipation (Max)	625mW (Ta)
Supplier Device Package	SOT-23-3
Transistor Configuration	Single
Maximum Power Dissipation	806 mW
Typical Gate Charge @ Vgs	4.8 nC @ 4.5 V
Total Gate Charge (Qg@Vgs)	4.8nC@4.5V
Maximum Gate Source Voltage	-8 V, +8 V
Number of Elements per Chip	1
Gate Charge (Qg) (Max) @ Vgs	4.8nC @ 4.5V
Input Capacitance (Ciss@Vds)	370pF@10V
Maximum Drain Source Voltage	20 V
Continuous Drain Current (Id)	2.1A
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Drain to Source Voltage (Vdss)	20V
Maximum Gate Threshold Voltage	1V
Maximum Drain Source Resistance	200 mΩ
Maximum Continuous Drain Current	2.4 A
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds	370pF @ 10V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25В°C	2.1A (Ta)