ZXMN10A08GTA, Trans MOSFET N-CH 100V 2A 4-Pin(3+Tab) SOT-223 T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001458653
- Артикул
- ZXMN10A08GTA
- Бренд
- DIODES INC.
- Tab
- Tab
- PPAP
- No
- Brand:
- Diodes Incorporated
- EU RoHS
- Compliant with Exemption
Цена по запросу
(от 70 ₽)
Минимальный заказ: 1000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 100V 2A 4-контактный (3+вкладки) SOT-223 T/R
Технические параметры
| Tab | Tab |
| PPAP | No |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant with Exemption |
| Series: | ZXMN10 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | No |
| Fall Time: | 3.2 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 2.2 ns |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | MOSFETs |
| Корпус | SOT-223 |
| Channel Mode: | Enhancement |
| Configuration | Single Dual Drain |
| Manufacturer: | Diodes Incorporated |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-223-3 |
| Product Category | Power MOSFET |
| Supplier Package | SOT-223 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 7.7 nC |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 3.2 |
| Typical Rise Time (ns) | 2.2 |
| Особенности | - |
| Pd - Power Dissipation: | 2 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 3.4 ns |
| Typical Turn-Off Delay Time: | 8 ns |
| Id - Continuous Drain Current: | 2.9 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 3900 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 7.7 |
| Typical Gate Charge @ Vgs (nC) | 7.7@10V|4.2@5V |
| Forward Transconductance - Min: | 5 S |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 3.4 |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 8 |
| Rds On - Drain-Source Resistance: | 250 mOhms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 2 |
| Typical Input Capacitance @ Vds (pF) | 405@50V |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Maximum Drain Source Resistance (mOhm) | 250@10V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Пороговое напряжение на затворе | 2.5V@250uA |
| Максимальное напряжение сток-исток Uси,В | 100 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 10 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 2 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |