ZXMN10A08E6TC, Trans MOSFET N-CH 100V 3.5A 6-Pin SOT-26 T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001283165
- Артикул
- ZXMN10A08E6TC
- Бренд
- DIODES INC.
- PPAP
- No
- EU RoHS
- Compliant
- Mounting
- Surface Mount
- ECCN (US)
- EAR99
Цена по запросу
(от 60 ₽)
Минимальный заказ: 10000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 6 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain |
| Package Width | 1.6 |
| Package Length | 3 |
| EDA / CAD Models | ZXMN10A08E6TC by Ultra Librarian |
| Product Category | Power MOSFET |
| Supplier Package | SOT-26 |
| Maximum IDSS (uA) | 0.5 |
| Структура | N-Channel |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 3.2 |
| Typical Rise Time (ns) | 2.2 |
| Особенности | - |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 6300 |
| Typical Gate Charge @ 10V (nC) | 7.7 |
| Typical Gate Charge @ Vgs (nC) | 4.2@5V|7.7@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 3.4 |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 8 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3.5 |
| Typical Input Capacitance @ Vds (pF) | 405@50V |
| Maximum Drain Source Resistance (mOhm) | 250@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Пороговое напряжение на затворе | 3V@250uA |
| Максимальное напряжение сток-исток Uси,В | 100 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 10 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |