Diodes Inc N-Channel MOSFET, 800 mA, 100 V, 3-Pin SOT-23 ZXMN10A07FTA
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8015181231
- Артикул
- ZXMN10A07FTA
- Бренд
- DIODES INC.
- ECCN
- EAR99
- Type
- 1PCSNChannel
- HTSUS
- 8541.21.0095
- Type:
- MOSFET
Цена по запросу
(от 46 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
N-канальный 100 В 700 мА (Ta) 625 МВт (Ta) для поверxностного монтажа SOT-23-3
Технические параметры
| ECCN | EAR99 |
| Type | 1PCSNChannel |
| HTSUS | 8541.21.0095 |
| Type: | MOSFET |
| Width | 1.4mm |
| Brand: | Diodes Incorporated |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Series: | ZXMN10A07 |
| FET Type | N-Channel |
| Product: | MOSFET Small Signal |
| Pin Count | 3 |
| Vgs (Max) | В±20V |
| Fall Time: | 2.1 ns |
| Rise Time: | 1.5 ns |
| Technology | MOSFET (Metal Oxide) |
| Вес, г | 1 |
| RoHS Status | ROHS3 Compliant |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOT-23 |
| REACH Status | REACH Unaffected |
| Subcategory: | MOSFETs |
| Корпус | SOT-23 |
| Channel Mode: | Enhancement |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Package/Case: | SOT-23-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 2.9 nC |
| Vgs(th) (Max) @ Id | 4V @ 250ВµA |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | N Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Power Dissipation (Pd) | 625mW |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 1.5A, 10V |
| Особенности | - |
| Pd - Power Dissipation: | 806 mW |
| Power Dissipation (Max) | 625mW (Ta) |
| Supplier Device Package | SOT-23-3 |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 806 mW |
| Typical Gate Charge @ Vgs | 2.9 nC @ 10 V |
| Vgs - Gate-Source Voltage | 4V @ 250uA |
| Total Gate Charge (Qg@Vgs) | 2.9nC@10V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 1.8 ns |
| Gate Charge (Qg) (Max) @ Vgs | 2.9nC @ 10V |
| Input Capacitance (Ciss@Vds) | 138pF@50V |
| Maximum Drain Source Voltage | 100 V |
| Typical Turn-Off Delay Time: | 4.1 ns |
| Continuous Drain Current (Id) | 700mA |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Drain to Source Voltage (Vdss) | 100V |
| Id - Continuous Drain Current: | 800 mA |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 1.6 S |
| Maximum Drain Source Resistance | 700 mΩ |
| Maximum Continuous Drain Current | 800 mA |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Rds On - Drain-Source Resistance | 700mО© @ 1.5A,10V |
| Rds On - Drain-Source Resistance: | 700 mOhms |
| Power Dissipation-Max (Ta=25В°C) | 625mW |
| Input Capacitance (Ciss) (Max) @ Vds | 138pF @ 50V |
| Vds - Drain-Source Breakdown Voltage | 100V |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Continuous Drain Current (Id) @ 25В°C | 700mA |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Current - Continuous Drain (Id) @ 25В°C | 700mA (Ta) |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Максимальное напряжение сток-исток Uси,В | 100 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 10 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.625 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |