ZXMHC6A07T8TA, Trans MOSFET N/P-CH 60V 1.6A/1.3A 8-Pin SM T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001286715
- Артикул
- ZXMHC6A07T8TA
- Бренд
- DIODES INC.
- PPAP
- No
- Type:
- MOSFET
- Width
- 3.7mm
- Brand:
- Diodes Incorporated
Цена по запросу
(от 210 ₽)
Минимальный заказ: 1000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N/P-MOSFET x2, полевой, 60/-60В, 1,4/-1,2А, 1,3Вт Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| PPAP | No |
| Type: | MOSFET |
| Width | 3.7mm |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant with Exemption |
| Series: | ZXMHC6A |
| Mounting | Surface Mount |
| Product: | MOSFET Small Signal |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Fall Time: | 2 ns, 5.8 ns |
| Rise Time: | 1.4 ns, 2.3 ns |
| Вес, г | 1 |
| PCB changed | 8 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Package Type | SM |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Quad |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Quad |
| Mounting Style: | SMD/SMT |
| Package / Case: | SM-8 |
| Product Category | Power MOSFET |
| Supplier Package | SM |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 3.2 nC, 5.1 nC |
| Структура | MOSFET |
| Number of Channels: | 4 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel, P-Channel |
| Typical Fall Time (ns) | 2@N Channel|5.8@P Channel |
| Typical Rise Time (ns) | 1.4@N Channel|2.3@P Channel |
| Особенности | комплементарная пара транзисторов |
| Pd - Power Dissipation: | 1.3 W |
| Transistor Configuration | Full Bridge |
| Maximum Power Dissipation | 1.7 W |
| Typical Gate Charge @ Vgs | 1.65 nC @ 5 V, 2.4 nC @ 5 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 4 |
| Typical Turn-On Delay Time: | 1.8 ns, 1.6 ns |
| Maximum Drain Source Voltage | 60 V |
| Typical Turn-Off Delay Time: | 4.9 ns, 13 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 1.8 A, 1.5 A |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 1700 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ Vgs (nC) | 1.65@5V@N Channel|2.4@5V@P Channel |
| Forward Transconductance - Min: | 2.3 S, 1.8 S |
| Maximum Drain Source Resistance | 300 mΩ, 425 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 1.8@N Channel|1.6@P Channel |
| Maximum Continuous Drain Current | 1.8 A, 1.5 A |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 4.9@N Channel|13@P Channel |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 1.6@N Channel|1.3@P Channel |
| Typical Input Capacitance @ Vds (pF) | 166@40V@N Channel|233@30V@P Channel |
| Maximum Drain Source Resistance (mOhm) | 300@10V@N Channel|425@10V@P Channel |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 6 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 1.3 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |