ZXMC4559DN8TA, Транзистор N/P-MOSFET, полевой, 60/-60В, 3,6/-2,6А, 1,25Вт, SO8
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- Код товара
- 8016053124
- Артикул
- ZXMC4559DN8TA
- Бренд
- DIODES INC.
- PPAP
- No
- Width
- 3.95mm
- Brand:
- Diodes Incorporated
- Вид
- MOSFET
Цена по запросу
(от 181,53 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N/P-MOSFET, полевой, 60/-60В, 3,6/-2,6А, 1,25Вт, SO8 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| PPAP | No |
| Width | 3.95mm |
| Brand: | Diodes Incorporated |
| Вид | MOSFET |
| Тип | полевой |
| EU RoHS | Compliant |
| Series: | ZXMC45 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Fall Time: | 10.6 ns, 10 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 4.1 ns |
| Вес, г | 0.1 |
| PCB changed | 8 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N, P |
| Package Type | SOIC |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Dual Dual Drain |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOIC-8 |
| Product Category | Power MOSFET |
| Supplier Package | SOIC |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 20.4 nC |
| Number of Channels: | 2 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel, P-Channel |
| Standard Package Name | SO |
| Typical Fall Time (ns) | 10.6@N Channel|10@P Channel |
| Typical Rise Time (ns) | 4.1 |
| Pd - Power Dissipation: | 2.1 W |
| Transistor Configuration | Isolated |
| Maximum Power Dissipation | 2.1 W |
| Typical Gate Charge @ Vgs | 20.4 nC @ 10 V, 24.2 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Typical Turn-On Delay Time: | 3.5 ns |
| Maximum Drain Source Voltage | 60 V |
| Typical Turn-Off Delay Time: | 26.2 ns, 35 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 4.7 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 2100 |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 20.4@N Channel|24.2@P Channel |
| Maximum Drain Source Resistance | 75 mΩ, 125 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 3.5 |
| Maximum Continuous Drain Current | 2.6 A, 4.7 A |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 26.2@N Channel|35@P Channel |
| Rds On - Drain-Source Resistance: | 75 mOhms |
| Maximum Gate Threshold Voltage (V) | 1(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3.6@N Channel|2.6@P Channel |
| Typical Input Capacitance @ Vds (pF) | 1063@30V@N Channel|1021@30V@P Channel |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Maximum Drain Source Resistance (mOhm) | 55@10V@N Channel|85@10V@P Channel |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Factory Pack Quantity: Factory Pack Quantity: | 500 |