ZXM61P03FTA, Trans MOSFET P-CH 30V 1.1A 3-Pin SOT-23 T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8000999113
- Артикул
- ZXM61P03FTA
- Бренд
- DIODES INC.
- PPAP
- No
- Type:
- MOSFET
- Width
- 1.4mm
- Brand:
- Diodes Incorporated
Цена по запросу
(от 24 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH 30V 1.1A с 3-контактным разъемом SOT-23 T/R
Технические параметры
| PPAP | No |
| Type: | MOSFET |
| Width | 1.4mm |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Series: | ZXM61P03 |
| Mounting | Surface Mount |
| Product: | MOSFET Small Signal |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 5 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 2.9 ns |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | SOT-23 |
| Subcategory: | MOSFETs |
| Корпус | SOT-23 |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Product Category | Small Signal |
| Supplier Package | SOT-23 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 4.8 nC |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | P-Channel |
| Standard Package Name | SOT-23 |
| Typical Fall Time (ns) | 5 |
| Typical Rise Time (ns) | 2.9 |
| Особенности | - |
| Pd - Power Dissipation: | 806 mW |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 806 mW |
| Typical Gate Charge @ Vgs | 4.8 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 1.9 ns |
| Maximum Drain Source Voltage | 30 V |
| Typical Turn-Off Delay Time: | 8.9 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 1.1 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 806 |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 4.8(Max) |
| Typical Gate Charge @ Vgs (nC) | 4.8(Max)10V |
| Forward Transconductance - Min: | 0.44 S |
| Maximum Drain Source Resistance | 550 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 45 |
| Typical Turn-On Delay Time (ns) | 1.9 |
| Maximum Continuous Drain Current | 1.1 A |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 8.9 |
| Rds On - Drain-Source Resistance: | 350 mOhms |
| Typical Gate to Drain Charge (nC) | 1.3(Max) |
| Maximum Gate Threshold Voltage (V) | 1(Min) |
| Typical Gate to Source Charge (nC) | 0.62(Max) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 1.1 |
| Typical Input Capacitance @ Vds (pF) | 140 25V |
| Typical Reverse Recovery Charge (nC) | 7.7 |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Maximum Drain Source Resistance (mOhm) | 350 10V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Пороговое напряжение на затворе | 1…2.5 В |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 1.1 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |