Diodes Inc P-Channel MOSFET, 900 mA, 20 V, 3-Pin SOT-23 ZXM61P02FTA
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- Код товара
- 8014470799
- Артикул
- ZXM61P02FTA
- Бренд
- DIODES INC.
- HTS
- 8541.29.00.95
- Type:
- MOSFET
- Width
- 1.4mm
- Brand:
- Diodes Incorporated
Цена по запросу
(от 26 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор P-MOSFET, полевой, -20В, -0,7А, 625мВт, SOT23 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| HTS | 8541.29.00.95 |
| Type: | MOSFET |
| Width | 1.4mm |
| Brand: | Diodes Incorporated |
| Вид | MOSFET |
| Тип | полевой |
| EU RoHS | Compliant |
| Series: | ZXM61P02 |
| Military | No |
| Mounting | Surface Mount |
| Product: | MOSFET Small Signal |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Yes |
| Fall Time: | 10.1 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 6.7 ns |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | SOT-23 |
| Subcategory: | MOSFETs |
| Корпус | SOT-23 |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Package Width | 1.3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package Height | 0.98 |
| Package Length | 2.9 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Product Category | Small Signal |
| Supplier Package | SOT-23 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 3.5 nC |
| Структура | P-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| AEC Qualified Number | AEC-Q101 |
| Transistor Polarity: | P-Channel |
| Standard Package Name | SOT-23 |
| Typical Fall Time (ns) | 10.1 |
| Typical Rise Time (ns) | 6.7 |
| Особенности | - |
| Pd - Power Dissipation: | 806 mW |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 806 mW |
| Typical Gate Charge @ Vgs | 3.5 nC @ 4.5 V |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 2.9 ns |
| Maximum Drain Source Voltage | 20 V |
| Typical Turn-Off Delay Time: | 11.2 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 920 mA |
| Maximum Gate Threshold Voltage | 1.5V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 806 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ Vgs (nC) | 3.5@4.5V |
| Forward Transconductance - Min: | 0.56 S |
| Maximum Drain Source Resistance | 900 mΩ |
| Maximum Gate Source Voltage (V) | ±12 |
| Typical Turn-On Delay Time (ns) | 2.9 |
| Maximum Continuous Drain Current | 900 mA |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 11.2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.9 |
| Typical Input Capacitance @ Vds (pF) | 150@15V |
| Maximum Drain Source Resistance (mOhm) | 600@4.5V |
| Vgs th - Gate-Source Threshold Voltage: | 700 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Пороговое напряжение на затворе | -12 V, +12 V |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.9 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.625 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 600 mOhms |