ZXM61N03FTA, Trans MOSFET N-CH 30V 1.4A 3-Pin SOT-23 T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001166166
- Артикул
- ZXM61N03FTA
- Бренд
- DIODES INC.
- HTS
- 8541.29.00.95
- Type
- MOSFET
- Brand
- Diodes Incorporated
- Type:
- MOSFET
Цена по запросу
(от 31 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-MOSFET, полевой, 30В, 1,1А, 625мВт, SOT23 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| HTS | 8541.29.00.95 |
| Type | MOSFET |
| Brand | Diodes Incorporated |
| Type: | MOSFET |
| Width | 1.4mm |
| Brand: | Diodes Incorporated |
| Series | ZXM61N03 |
| EU RoHS | Compliant |
| Product | MOSFET Small Signal |
| Series: | ZXM61N03 |
| Military | No |
| Mounting | Surface Mount |
| Product: | MOSFET Small Signal |
| ECCN (US) | EAR99 |
| Fall Time | 3 ns |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Rise Time | 2.5 ns |
| Automotive | No |
| Fall Time: | 3 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 2.5 ns |
| Technology | Si |
| Вес, г | 0.01 |
| PCB changed | 3 |
| Part Status | Active |
| Subcategory | MOSFETs |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | Diodes Incorporated |
| Package Type | SOT-23 |
| Product Type | MOSFET |
| Subcategory: | MOSFETs |
| Корпус | SOT-23 |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Package Width | 1.4(Max) |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Package Height | 1.02(Max) |
| Package Length | 3.04(Max) |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Transistor Type | 1 N-Channel |
| Product Category | Small Signal |
| Supplier Package | SOT-23 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 4.1 nC |
| Number Of Channels | 1 Channel |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 3000 |
| Standard Package Name | SOT-23 |
| Pd - Power Dissipation | 625 mW |
| Typical Fall Time (ns) | 3 |
| Typical Rise Time (ns) | 2.5 |
| Особенности | - |
| Pd - Power Dissipation: | 625 mW |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 806 mW |
| Typical Gate Charge @ Vgs | 4.1 nC @ 10 V |
| Vgs - Gate-Source Voltage | 10 V |
| Typical Turn-On Delay Time | 1.9 ns |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 5.8 ns |
| Typical Turn-On Delay Time: | 1.9 ns |
| Maximum Drain Source Voltage | 30 V |
| Typical Turn-Off Delay Time: | 5.8 ns |
| Id - Continuous Drain Current | 1.4 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 0.87 S |
| Id - Continuous Drain Current: | 1.4 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 806 |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 4.1(Max) |
| Typical Gate Charge @ Vgs (nC) | 4.1(Max)@10V |
| Forward Transconductance - Min: | 0.87 S |
| Maximum Drain Source Resistance | 300 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 35 |
| Typical Turn-On Delay Time (ns) | 1.9 |
| Maximum Continuous Drain Current | 1.4 A |
| Maximum Drain Source Voltage (V) | 30 |
| Rds On - Drain-Source Resistance | 220 mOhms |
| Typical Turn-Off Delay Time (ns) | 5.8 |
| Rds On - Drain-Source Resistance: | 220 mOhms |
| Typical Gate to Drain Charge (nC) | 0.63(Max) |
| Maximum Gate Threshold Voltage (V) | 1(Min) |
| Typical Gate to Source Charge (nC) | 0.4(Max) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Typical Input Capacitance @ Vds (pF) | 150@25V |
| Typical Reverse Recovery Charge (nC) | 3.5 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Maximum Drain Source Resistance (mOhm) | 300@4.5V |
| Vgs Th - Gate-Source Threshold Voltage | 1 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Пороговое напряжение на затворе | 1…2.5 В |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 1.4 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |