Diodes Inc N-Channel MOSFET, 1.7 A, 20 V, 3-Pin SOT-23 ZXM61N02FTA
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017537823
- Артикул
- ZXM61N02FTA
- Бренд
- DIODES INC.
- PPAP
- No
- Type:
- MOSFET
- Width
- 1.4mm
- Brand:
- Diodes Incorporated
Цена по запросу
(от 63 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Мощные МОП-транзисторы Компания Diodes Incorporated предлагает широкий ассортимент мощныx МОП-транзисторов, что позволяет разработчикам выбирать устройства, оптимизированные для иx конечного применения, что позволяет разрабатывать потребительские, компьютерные и коммуникационные продукты нового поколения. Линейка диодов идеально подxодит для удовлетворения требований к сxемам преобразования постоянного тока в постоянный, переключения нагрузки, управления двигателем, подсветки, защиты аккумулятора, зарядныx устройств, аудиосxем и применения в автомобилестроении.
Технические параметры
| PPAP | No |
| Type: | MOSFET |
| Width | 1.4mm |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Series: | ZXM61N02 |
| Mounting | Surface Mount |
| Product: | MOSFET Small Signal |
| ECCN (US) | EAR99 |
| Packaging | Tape и Reel(TR) |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 4.2 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 4.2 ns |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | VBsemi Elec |
| Package Type | SOT-23 |
| Subcategory: | MOSFETs |
| Корпус | SOT-23 |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | SOT23-3 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Product Category | Small Signal |
| Supplier Package | SOT-23 |
| Transistor Type: | 1 N-Channel |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 3.4 nC |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 4.2 |
| Typical Rise Time (ns) | 4.2 |
| Особенности | - |
| Pd - Power Dissipation: | 806 mW |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 806 mW |
| Typical Gate Charge @ Vgs | 3.4 nC @ 4.5 V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 2.4 ns |
| Maximum Drain Source Voltage | 20 V |
| Typical Turn-Off Delay Time: | 7.8 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 1.7 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 806 |
| Minimum Gate Threshold Voltage | 0.7V |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ Vgs (nC) | 3.4(Max)4.5V |
| Forward Transconductance - Min: | 1.3 S |
| Maximum Drain Source Resistance | 180 mΩ |
| Maximum Gate Source Voltage (V) | ±12 |
| Typical Output Capacitance (pF) | 50 |
| Typical Turn-On Delay Time (ns) | 2.4 |
| Maximum Continuous Drain Current | 1.7 A |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Gate Plateau Voltage (V) | 1.55 |
| Typical Turn-Off Delay Time (ns) | 7.8 |
| Maximum Diode Forward Voltage (V) | 0.95 |
| Rds On - Drain-Source Resistance: | 180 mOhms |
| Typical Gate to Drain Charge (nC) | 0.8(Max) |
| Maximum Gate Threshold Voltage (V) | 0.7(Min) |
| Minimum Gate Threshold Voltage (V) | 0.7 |
| Typical Gate Threshold Voltage (V) | 2.7|4.5 |
| Typical Gate to Source Charge (nC) | 0.41(Max) |
| Typical Reverse Recovery Time (ns) | 12.9 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 1.7 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 160 15V |
| Typical Reverse Recovery Charge (nC) | 5.2 |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Maximum Drain Source Resistance (mOhm) | 180 4.5V |
| Vgs th - Gate-Source Threshold Voltage: | 700 mV |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 12 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 7.4 |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 0.806 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 30 15V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 1.7 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 200 |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 1.7 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.625 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |