ZVN4306GTA, Trans MOSFET N-CH 60V 2.1A 4-Pin(3+Tab) SOT-223 T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001228365
- Артикул
- ZVN4306GTA
- Бренд
- DIODES INC.
- Tab
- Tab
- PPAP
- No
- Type
- N Channel
- Type:
- FET
Цена по запросу
(от 150 ₽)
Минимальный заказ: 1000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 60V 2.1A 4-контактный (3+вкладки) SOT-223 T/R
Технические параметры
| Tab | Tab |
| PPAP | No |
| Type | N Channel |
| Type: | FET |
| Width | 3.7mm |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant with Exemption |
| Series: | ZVN4306 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | No |
| Fall Time: | 16 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 25 ns |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOT-223 |
| Subcategory: | MOSFETs |
| Корпус | SOT-223 |
| Channel Mode: | Enhancement |
| Configuration | Single Dual Drain |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-223-3 |
| Product Category | Power MOSFET |
| Supplier Package | SOT-223 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Standard Package Name | SOT |
| Power Dissipation (Pd) | 3W |
| Typical Fall Time (ns) | 16(Max) |
| Typical Rise Time (ns) | 25(Max) |
| Особенности | - |
| Pd - Power Dissipation: | 3 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 3 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 8 ns |
| Input Capacitance (Ciss@Vds) | 350pF@25V |
| Maximum Drain Source Voltage | 60 V |
| Typical Turn-Off Delay Time: | 30 ns |
| Continuous Drain Current (Id) | 2.1A |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 2.1 A |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 3000 |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 0.7 S |
| Maximum Drain Source Resistance | 330 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 8(Max) |
| Maximum Continuous Drain Current | 2.1 A |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 30(Max) |
| Rds On - Drain-Source Resistance: | 330 mOhms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 2.1 |
| Typical Input Capacitance @ Vds (pF) | 350(Max)@25V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Maximum Drain Source Resistance (mOhm) | 330@10V |
| Vgs th - Gate-Source Threshold Voltage: | 1.3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Пороговое напряжение на затворе | 2.5V@250uA |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 2.1 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 3 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |