Diodes Inc N-Channel MOSFET, 270 mA, 60 V, 3-Pin E-Line ZVN3306A
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025732217
- Артикул
- ZVN3306A
- Бренд
- DIODES INC.
- Case
- TO92
- Type:
- FET
- Width
- 2.41mm
- Brand:
- Diodes Incorporated
Цена по запросу
(от 79 ₽)
Минимальный заказ: 4000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-MOSFET, полевой, 60В, 0,27А, 625мВт, TO92 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Case | TO92 |
| Type: | FET |
| Width | 2.41mm |
| Brand: | Diodes Incorporated |
| Series: | ZVN3306 |
| Mounting | THT |
| Product: | MOSFET Small Signal |
| Pin Count | 3 |
| Fall Time: | 8 ns |
| Packaging: | Bulk |
| Rise Time: | 7 ns |
| Вес, г | 1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | DIODES INCORPORATED |
| Package Type | E-Line |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Drain current | 0.27A |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Configuration: | Single |
| Kind of channel | enhanced |
| Kind of package | bulk |
| Mounting Style: | Through Hole |
| Package / Case: | TO-92-3 |
| Transistor Type: | 1 N-Channel |
| Power dissipation | 0.625W |
| Product Category: | MOSFET |
| Type of transistor | N-MOSFET |
| Структура | N-Channel |
| Gate-source voltage | ±20V |
| Number of Channels: | 1 Channel |
| On-state resistance | 5Ω |
| Transistor Material | Si |
| Drain-source voltage | 60V |
| Transistor Polarity: | N-Channel |
| Особенности | - |
| Pd - Power Dissipation: | 625 mW |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 625 mW |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 5 ns |
| Maximum Drain Source Voltage | 60 V |
| Typical Turn-Off Delay Time: | 6 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 270 mA |
| Maximum Gate Threshold Voltage | 2.4V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 150 mS |
| Maximum Drain Source Resistance | 5 Ω |
| Maximum Continuous Drain Current | 270 mA |
| Rds On - Drain-Source Resistance: | 5 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 800 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.27 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.625 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |