ZVN2106ASTZ, Trans MOSFET N-CH 60V 0.45A 3-Pin E-Line T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001143026
- Артикул
- ZVN2106ASTZ
- Бренд
- DIODES INC.
- PPAP
- No
- Type:
- FET
- Brand:
- Diodes Incorporated
- EU RoHS
- Compliant
Цена по запросу
(от 66 ₽)
Минимальный заказ: 2000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-MOSFET, полевой, 60В, 0,45А, 0,7Вт, TO92 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| PPAP | No |
| Type: | FET |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Series: | ZVN2106 |
| Mounting | Through Hole |
| Product: | MOSFET Small Signals |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Packaging: | Ammo Pack |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-92-3 |
| Product Category | Small Signal |
| Supplier Package | E-Line |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Process Technology | DMOS |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | TO-92 |
| Особенности | - |
| Pd - Power Dissipation: | 700 mW |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Id - Continuous Drain Current: | 450 mA |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 700 |
| Minimum Operating Temperature: | -55 C |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Drain Source Voltage (V) | 60 |
| Rds On - Drain-Source Resistance: | 2 Ohms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.45 |
| Typical Input Capacitance @ Vds (pF) | 75(Max)@18V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Maximum Drain Source Resistance (mOhm) | 2000@10V |
| Vgs th - Gate-Source Threshold Voltage: | 800 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Пороговое напряжение на затворе | 4V@250uA |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.45 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.7 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |