ZTX957, 300V 1.2W 100@500mA,10V 1A PNP BIpolar (BJT) ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8044760313
- Артикул
- ZTX957
- Бренд
- DIODES INC.
- RoHS
- Details
- Brand
- Diodes Incorporated
- Width
- 2.41 mm
- Brand:
- Diodes Incorporated
Цена по запросу
(от 190 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярные транзисторы - BJT PNP Big Chip SELine
Технические параметры
| RoHS | Details |
| Brand | Diodes Incorporated |
| Width | 2.41 mm |
| Brand: | Diodes Incorporated |
| Height | 4.01 mm |
| Length | 4.77 mm |
| Series | ZTX957 |
| Packaging | Bulk |
| Packaging: | Bulk |
| Вес, г | 1 |
| Technology: | Si |
| Unit Weight | 0.016 oz |
| Manufacturer | Diodes Incorporated |
| Subcategory: | Transistors |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Package/Case: | TO-92-3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style | Through Hole |
| Package / Case | TO-92-3 |
| Mounting Style: | Through Hole |
| Product Category | Bipolar Transistors-BJT |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity | PNP |
| Transistor Polarity: | PNP |
| Factory Pack Quantity | 4000 |
| Factory Pack Quantity: | 4000 |
| Pd - Power Dissipation | 1.2 W |
| Pd - Power Dissipation: | 1.2 W |
| Gain Bandwidth Product fT | 85 MHz |
| Emitter- Base Voltage VEBO | -6 V |
| Gain Bandwidth Product fT: | 85 MHz |
| Emitter- Base Voltage VEBO: | 6 V |
| Collector- Base Voltage VCBO | -330 V |
| Continuous Collector Current | -1 A |
| Maximum DC Collector Current | -1 A |
| Collector- Base Voltage VCBO: | 330 V |
| Continuous Collector Current: | -1 A |
| Maximum DC Collector Current: | 1 A |
| Maximum Operating Temperature | +200 C |
| Minimum Operating Temperature | -55 C |
| Maximum Operating Temperature: | +200 C |
| Minimum Operating Temperature: | -55 C |
| Collector- Emitter Voltage VCEO Max | -300 V |
| Collector- Emitter Voltage VCEO Max: | 300 V |
| Collector-Emitter Saturation Voltage | -140 mV |
| Collector-Emitter Saturation Voltage: | 140 mV |