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ZTX855, 150V 1.2W 100@1A,5V 4A NPN BIpolar (BJT) ROHS

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Код товара
8070214048
Артикул
ZTX855
Бренд
DIODES INC.
Brand:
Diodes Incorporated
Series:
ZTX855
Pin Count
3
Packaging:
Bulk
Цена по запросу
(от 124,86 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Технические параметры

Brand:Diodes Incorporated
Series:ZTX855
Pin Count3
Packaging:Bulk
Вес, г1
Technology:Si
Package TypeTO-92
Subcategory:Transistors
Manufacturer:Diodes Incorporated
Mounting TypeThrough Hole
Package/Case:TO-92-3
Product Type:BJTs-Bipolar Transistors
REACH - SVHC:Details
Configuration:Single
Mounting Style:Through Hole
Transistor TypeNPN
Product Category:Bipolar Transistors-BJT
Структураnpn
Transistor Polarity:NPN
Minimum DC Current Gain100
Pd - Power Dissipation:1.2 W
Transistor ConfigurationSingle
Maximum Power Dissipation1.58 W
Gain Bandwidth Product fT:90 MHz
Emitter- Base Voltage VEBO:6 V
Maximum Operating Frequency100 MHz
Number of Elements per Chip1
Maximum DC Collector Current4 A
Maximum Emitter Base Voltage6 V
Collector- Base Voltage VCBO:250 V
Continuous Collector Current:4 A
Maximum DC Collector Current:4 A
Maximum Operating Temperature+200 °C
Maximum Collector Base Voltage250 V
Maximum Operating Temperature:+200 C
Minimum Operating Temperature:-55 C
Maximum Collector Emitter Voltage150 V
Collector- Emitter Voltage VCEO Max:150 V
Collector-Emitter Saturation Voltage:210 mV
Factory Pack Quantity: Factory Pack Quantity:4000

Техническая документация

ZTX855 DIODES INC.: купить, цена от 124,86 ₽ | ЭПЛ