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ZTX855,Bipolar (BJT) Single Transistor, NPN, 150 V, 4 A, 1.58 W, E-Line, Through Hole

ZTX855,Bipolar (BJT) Single Transistor, NPN, 150 V, 4 A, 1.58 W, E-Line, Through Hole

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Код товара
8044637083
Артикул
ZTX855
Бренд
DIODES INC.
Brand:
Diodes Incorporated
Series:
ZTX855
Pin Count
3
Packaging:
Bulk
Цена по запросу
(от 194 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Технические параметры

Brand:Diodes Incorporated
Series:ZTX855
Pin Count3
Packaging:Bulk
Вес, г0.001
Technology:Si
Package TypeTO-92
Subcategory:Transistors
Manufacturer:Diodes Incorporated
Mounting TypeThrough Hole
Package/Case:TO-92-3
Product Type:BJTs-Bipolar Transistors
REACH - SVHC:Details
Configuration:Single
Mounting Style:Through Hole
Transistor TypeNPN
Product Category:Bipolar Transistors-BJT
Структураnpn
Transistor Polarity:NPN
Minimum DC Current Gain100
Pd - Power Dissipation:1.2 W
Transistor ConfigurationSingle
Maximum Power Dissipation1.58 W
Gain Bandwidth Product fT:90 MHz
Emitter- Base Voltage VEBO:6 V
Maximum Operating Frequency100 MHz
Number of Elements per Chip1
Maximum DC Collector Current4 A
Maximum Emitter Base Voltage6 V
Collector- Base Voltage VCBO:250 V
Continuous Collector Current:4 A
Maximum DC Collector Current:4 A
Maximum Operating Temperature+200 °C
Maximum Collector Base Voltage250 V
Maximum Operating Temperature:+200 C
Minimum Operating Temperature:-55 C
Maximum Collector Emitter Voltage150 V
Collector- Emitter Voltage VCEO Max:150 V
Collector-Emitter Saturation Voltage:210 mV
Factory Pack Quantity: Factory Pack Quantity:4000
Максимально допустимый ток к ( Iк макс.А)4

Техническая документация