ZTX853STZ,Bipolar (BJT) Single Transistor, NPN, 100 V, 4 A, 1.58 W, E-Line, Through Hole
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- Код товара
- 8044637082
- Артикул
- ZTX853STZ
- Бренд
- DIODES INC.
- Brand:
- Diodes Incorporated
- Packaging:
- Reel, Cut Tape
- Вес, г
- 0.001
- Technology:
- Si
Цена по запросу
(от 204 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Diodes Incorporated |
| Packaging: | Reel, Cut Tape |
| Вес, г | 0.001 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | Diodes Incorporated |
| Package/Case: | TO-92-3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN |
| Factory Pack Quantity: | 2000 |
| Pd - Power Dissipation: | 1.2 W |
| Gain Bandwidth Product fT: | 130 MHz |
| Emitter- Base Voltage VEBO: | 6 V |
| Collector- Base Voltage VCBO: | 200 V |
| Continuous Collector Current: | 4 A |
| Maximum DC Collector Current: | 4 A |
| Maximum Operating Temperature: | +200 C |
| Minimum Operating Temperature: | -55 C |
| Collector- Emitter Voltage VCEO Max: | 100 V |
| Collector-Emitter Saturation Voltage: | 160 mV |
| Максимально допустимый ток к ( Iк макс.А) | 4 |