ZTX851STZ,Bipolar (BJT) Single Transistor, NPN, 60 V, 5 A, 1.58 W, E-Line, Through Hole
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- Код товара
- 8062966902
- Артикул
- ZTX851STZ
- Бренд
- DIODES INC.
- Brand:
- Diodes Incorporated
- Series:
- ZTX851
- Packaging:
- Ammo Pack
- Вес, г
- 0.001
Цена по запросу
(от 271 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Diodes Incorporated |
| Series: | ZTX851 |
| Packaging: | Ammo Pack |
| Вес, г | 0.001 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | Diodes Incorporated |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-92-3 |
| Transistor Type | NPN |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN |
| Collector Current (Ic) | 5A |
| Power Dissipation (Pd) | 1.2W |
| Pd - Power Dissipation: | 1.2 W |
| DC Current Gain hFE Max: | 120 |
| Transition Frequency (fT) | 130MHz |
| Gain Bandwidth Product fT: | 130 MHz |
| Emitter- Base Voltage VEBO: | 6 V |
| DC Current Gain (hFE@Ic,Vce) | 100@2A, 1V |
| Collector- Base Voltage VCBO: | 150 V |
| Continuous Collector Current: | 5 A |
| Maximum DC Collector Current: | 5 A |
| Maximum Operating Temperature: | +200 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 75 |
| Collector Cut-Off Current (Icbo) | 1uA |
| Collector- Emitter Voltage VCEO Max: | 60 V |
| Collector-Emitter Saturation Voltage: | 250 mV |
| Collector-Emitter Breakdown Voltage (Vceo) | 60V |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 250mV@200mA, 5A |
| Максимально допустимый ток к ( Iк макс.А) | 5 |