ZTX757STZ, Trans GP BJT PNP 300V 0.5A 1000mW 3-Pin E-Line Box
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- Код товара
- 8034477579
- Артикул
- ZTX757STZ
- Бренд
- DIODES INC.
- RoHS
- Details
- Brand
- Diodes Incorporated
- Width
- 2.41 mm
- Brand:
- Diodes Incorporated
Цена по запросу
(от 63 ₽)
Минимальный заказ: 480 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Автомобильный 3-контактный Электронный блок Trans GP BJT PNP 300V 0.5A
Технические параметры
| RoHS | Details |
| Brand | Diodes Incorporated |
| Width | 2.41 mm |
| Brand: | Diodes Incorporated |
| Height | 4.01 mm |
| Length | 4.77 mm |
| Series | ZTX757 |
| Series: | ZTX757 |
| Packaging | Bulk |
| Packaging: | Ammo Pack |
| Вес, г | 0.05 |
| Technology: | Si |
| Manufacturer | Diodes Incorporated |
| Subcategory: | Transistors |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style | Through Hole |
| Package / Case | TO-92-3 |
| Mounting Style: | Through Hole |
| Package / Case: | TO-92-3 |
| Product Category | Bipolar Transistors-BJT |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity | PNP |
| Transistor Polarity: | PNP |
| Factory Pack Quantity | 2000 |
| Pd - Power Dissipation | 1 W |
| DC Current Gain hFE Max | 50 at 100 mA at 5 V |
| Pd - Power Dissipation: | 1 W |
| DC Current Gain hFE Max: | 50 at 100 mA, 5 V |
| Gain Bandwidth Product fT | 30 MHz |
| Emitter- Base Voltage VEBO | -5 V |
| Gain Bandwidth Product fT: | 30 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| Collector- Base Voltage VCBO | -300 V |
| Continuous Collector Current | -0.5 A |
| Maximum DC Collector Current | 0.5 A |
| Collector- Base Voltage VCBO: | 300 V |
| Continuous Collector Current: | -500 mA |
| Maximum DC Collector Current: | 500 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| DC Collector/Base Gain hfe Min | 50 at 100 mA at 5 V, 40 at 10 mA at 5 V |
| Maximum Operating Temperature: | +200 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 50 at 100 mA, 5 V, 40 at 10 mA, 5 V |
| Collector- Emitter Voltage VCEO Max | -300 V |
| Collector- Emitter Voltage VCEO Max: | 300 V |
| Collector-Emitter Saturation Voltage: | 500 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Максимально допустимый ток к ( Iк макс.А) | 0.5 |