Моя заявка (0)

ZTX658,Bipolar (BJT) Single Transistor, NPN, 400 V, 500 mA, 1 W, E-Line, Through Hole

ZTX658,Bipolar (BJT) Single Transistor, NPN, 400 V, 500 mA, 1 W, E-Line, Through Hole

Изображения служат только для ознакомления, см. техническую документацию

Код товара
8677369851
Артикул
ZTX658
Бренд
DIODES INC.
Brand:
Diodes Incorporated
Series:
ZTX658
Packaging:
Bulk
Вес, г
0.159
Цена по запросу
(от 163 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Технические параметры

Brand:Diodes Incorporated
Series:ZTX658
Packaging:Bulk
Вес, г0.159
Technology:Si
Subcategory:Transistors
Manufacturer:Diodes Incorporated
Package/Case:TO-92-3
Product Type:BJTs-Bipolar Transistors
Configuration:Single
Mounting Style:Through Hole
Transistor TypeNPN
Product Category:Bipolar Transistors-BJT
Структураnpn
Transistor Polarity:NPN
Collector Current (Ic)500mA
Power Dissipation (Pd)1W
Pd - Power Dissipation:1 W
DC Current Gain hFE Max:50 at 1 mA, 5 V
Transition Frequency (fT)50MHz
Gain Bandwidth Product fT:50 MHz
Emitter- Base Voltage VEBO:5 V
DC Current Gain (hFE@Ic,Vce)50@100mA, 5V
Collector- Base Voltage VCBO:400 V
Continuous Collector Current:500 mA
Maximum DC Collector Current:500 mA
Maximum Operating Temperature:+200 C
Minimum Operating Temperature:-55 C
Collector Cut-Off Current (Icbo)100nA
Collector- Emitter Voltage VCEO Max:400 V
Collector-Emitter Saturation Voltage:500 mV
Collector-Emitter Breakdown Voltage (Vceo)400V
Factory Pack Quantity: Factory Pack Quantity:4000
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)500mV@10mA, 100mA

Техническая документация