ZTX450, Транзистор NPN, биполярный, 60В, 1А, 1Вт, TO92
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070160015
- Артикул
- ZTX450
- Бренд
- DIODES INC.
- Brand:
- Diodes Incorporated
- Series:
- ZTX450
- Version
- NPN
- Assembly
- THT
Цена по запросу
(от 142,78 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
NPN-транзистор, ZTX450, ДИОДЫ NPN-кремниевый планарный транзистор средней мощности, E-Line.
Технические параметры
| Brand: | Diodes Incorporated |
| Series: | ZTX450 |
| Version | NPN |
| Assembly | THT |
| Enclosure | e-line |
| Pin Count | 3 |
| Packaging: | Bulk |
| Вес, г | 0.17 |
| Min DC gain | 100 mA |
| Technology: | Si |
| Package Type | TO-92 |
| Subcategory: | Transistors |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Through Hole |
| Product Type: | BJTs-Bipolar Transistors |
| Rated current | 1 A |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-92-3 |
| Transistor Type | NPN |
| Collector current | 1 A |
| Power dissipation | 1 W |
| Product Category: | Bipolar Transistors-BJT |
| Saturation voltage | 250 mV |
| Структура | npn |
| Max DC amplification | 300 mA |
| Transistor Polarity: | NPN |
| Collector Current (Ic) | 1A |
| Power Dissipation (Pd) | 1W |
| Minimum DC Current Gain | 100 |
| Pd - Power Dissipation: | 1 W |
| Transit frequency fTmin | 150 MHz |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 1 W |
| Transition Frequency (fT) | 150MHz |
| Gain Bandwidth Product fT: | 150 MHz |
| max. operating temperature | 200 °C |
| min. operating temperature | -55 °C |
| Emitter- Base Voltage VEBO: | 5 V |
| Maximum Operating Frequency | 150 MHz |
| Number of Elements per Chip | 1 |
| DC Current Gain (hFE@Ic,Vce) | 100@150mA, 10V |
| Maximum DC Collector Current | 1 A |
| Maximum Emitter Base Voltage | 5 V |
| Collector- Base Voltage VCBO: | 60 V |
| Continuous Collector Current: | 1 A |
| Maximum DC Collector Current: | 1 A |
| Maximum Operating Temperature | +200 °C |
| Maximum Collector Base Voltage | 60 V |
| Maximum Operating Temperature: | +200 C |
| Minimum Operating Temperature: | -55 C |
| Collector Cut-Off Current (Icbo) | 100nA |
| Maximum Collector Emitter Voltage | 45 V |
| Collector- Emitter Voltage VCEO Max: | 45 V |
| Collector-Emitter Saturation Voltage: | 250 mV |
| Collector-Emitter Breakdown Voltage (Vceo) | 45V |
| max.voltage between collector and base Vcbo | 60 V |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |
| max.voltage between collector and emitter Vceo | 45 V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 250mV@150mA, 15mA |