ZTX1053A, 75V 1W 300@1A,2V 3A NPN BIpolar (BJT) ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8044795675
- Артикул
- ZTX1053A
- Бренд
- DIODES INC.
- PPAP
- No
- SVHC
- Yes
- Type
- NPN
- Brand:
- Diodes Incorporated
Цена по запросу
(от 139 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| PPAP | No |
| SVHC | Yes |
| Type | NPN |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant with Exemption |
| Material | Si |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Packaging: | Bulk |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Subcategory: | Transistors |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Package Width | 2.28 |
| Package/Case: | TO-92-3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Package Length | 4.57 |
| Mounting Style: | Through Hole |
| Product Category | Bipolar Power |
| Supplier Package | E-Line |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN |
| Standard Package Name | TO-92 |
| Factory Pack Quantity: | 4000 |
| SVHC Exceeds Threshold | Yes |
| Minimum DC Current Gain | 100@3A@2V|300@1A@2V|260@10mA@2V |
| Pd - Power Dissipation: | 1 W |
| Gain Bandwidth Product fT: | 140 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO: | 150 V |
| Continuous Collector Current: | 3 A |
| Maximum DC Collector Current: | 3 A |
| Maximum Operating Temperature: | +200 C |
| Maximum Power Dissipation (mW) | 1000 |
| Minimum Operating Temperature: | -55 C |
| Maximum DC Collector Current (A) | 3 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 150 |
| Maximum Transition Frequency (MHz) | 140(Typ) |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 75 V |
| Collector-Emitter Saturation Voltage: | 250 mV |
| Maximum Collector-Emitter Voltage (V) | 75 |
| Maximum Collector Cut-Off Current (nA) | 10 |
| Maximum Base Emitter Saturation Voltage (V) | 1@100mA@3A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.25@100mA@3A|0.15@10mA@1A|0.025@20mA@0.2A |
| Максимально допустимый ток к ( Iк макс.А) | 3 |