ZDT694TA, Trans GP BJT NPN 120V 0.5A 2750mW 8-Pin SM T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001174196
- Артикул
- ZDT694TA
- Бренд
- DIODES INC.
- PPAP
- No
- Type
- NPN
- Brand:
- Diodes Incorporated
- EU RoHS
- Compliant with Exemption
Цена по запросу
(от 120 ₽)
Минимальный заказ: 1000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT NPN 120 В 0,5 А 2750 МВт 8-контактный SM8 T/R
Технические параметры
| PPAP | No |
| Type | NPN |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant with Exemption |
| Series: | ZDT694 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Вес, г | 1 |
| PCB changed | 8 |
| Part Status | Active |
| Technology: | Si |
| Subcategory: | Transistors |
| Configuration | Dual Dual Collector |
| Manufacturer: | Diodes Incorporated |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Package / Case: | SM-8 |
| Product Category | Bipolar Power |
| Supplier Package | SM8 |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN |
| Minimum DC Current Gain | 500@100mA@2V|400@200mA@2V|150@400mA@2V |
| Pd - Power Dissipation: | 2.75 W |
| DC Current Gain hFE Max: | 500 |
| Gain Bandwidth Product fT: | 130 MHz |
| Emitter- Base Voltage VEBO: | 7 V |
| Number of Elements per Chip | 2 |
| Collector- Base Voltage VCBO: | 120 V |
| Maximum DC Collector Current: | 500 mA |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 2750 |
| Minimum Operating Temperature: | -55 C |
| Maximum DC Collector Current (A) | 0.5 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 120 |
| Maximum Transition Frequency (MHz) | 130(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 120 V |
| Collector-Emitter Saturation Voltage: | 500 mV |
| Maximum Collector-Emitter Voltage (V) | 120 |
| Maximum Base Emitter Saturation Voltage (V) | 0.9@10mA@1A |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.25@0.5mA@0.1A|0.5@5mA@0.4A |
| Максимально допустимый ток к ( Iк макс.А) | 0.5 |