VP2450N3-G, Транзистор P-МОП, -500В, -200мА, 740мВт, TO92

Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8066536247
- Артикул
- VP2450N3-G
- Бренд
- Microchip Technology
- Type:
- FET
- Brand:
- Microchip Technology
- Fall Time:
- 25 ns
- Packaging:
- Bulk
Цена по запросу
(от 301,62 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Type: | FET |
| Brand: | Microchip Technology |
| Fall Time: | 25 ns |
| Packaging: | Bulk |
| Rise Time: | 25 ns |
| Вес, г | 0.23 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Microchip |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-92-3 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Pd - Power Dissipation: | 1 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 10 ns |
| Typical Turn-Off Delay Time: | 45 ns |
| Id - Continuous Drain Current: | 100 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 30 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |