VP0106N3-G, Транзистор P-МОП, -60В, -500мА, 1Вт, TO92
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062565169
- Артикул
- VP0106N3-G
- Бренд
- Microchip Technology
- Case
- TO92
- Type:
- FET
- Brand:
- Microchip Technology
- Series
- VP0106
Цена по запросу
(от 153 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Обычно выключаемый транзистор Microchip enhancement mode использует вертикальную структуру DMOS и xорошо зарекомендовавший себя процесс производства кремниевыx затворов Supertex.
Технические параметры
| Case | TO92 |
| Type: | FET |
| Brand: | Microchip Technology |
| Series | VP0106 |
| Mounting | THT |
| Pin Count | 3 |
| Fall Time: | 4 ns |
| Packaging: | Bulk |
| Rise Time: | 5 ns |
| Вес, г | 0.21 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Manufacturer | MICROCHIP TECHNOLOGY |
| Package Type | TO-92 |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Microchip |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Configuration: | Single |
| Kind of channel | enhanced |
| Kind of package | bulk |
| Mounting Style: | Through Hole |
| Package / Case: | TO-92-3 |
| Transistor Type: | 1 P-Channel |
| Power dissipation | 1W |
| Product Category: | MOSFET |
| Type of transistor | P-MOSFET |
| Gate-source voltage | ±20V |
| Number of Channels: | 1 Channel |
| On-state resistance | 8Ω |
| Drain-source voltage | -60V |
| Pulsed drain current | -0.5A |
| Transistor Polarity: | P-Channel |
| Pd - Power Dissipation: | 1 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 4 ns |
| Maximum Drain Source Voltage | 60 V |
| Typical Turn-Off Delay Time: | 8 ns |
| Id - Continuous Drain Current: | 250 mA |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 150 mS |
| Maximum Drain Source Resistance | 8 Ω |
| Maximum Continuous Drain Current | 250 mA |
| Rds On - Drain-Source Resistance: | 8 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |