VP0104N3-G, Транзистор P-МОП, -40В, -500мА, 1Вт, TO92
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- Код товара
- 8062565168
- Артикул
- VP0104N3-G
- Бренд
- Microchip Technology
- Type:
- FET
- Brand:
- Microchip Technology
- Fall Time:
- 4 ns
- Packaging:
- Bulk
Цена по запросу
(от 149 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор P-МОП, -40В, -500мА, 1Вт, TO92
Технические параметры
| Type: | FET |
| Brand: | Microchip Technology |
| Fall Time: | 4 ns |
| Packaging: | Bulk |
| Rise Time: | 3 ns |
| Вес, г | 0.23 |
| Technology: | Si |
| Channel Type | P |
| Package Type | TO-92 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Microchip |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-92-3 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Pd - Power Dissipation: | 1 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 4 ns |
| Maximum Drain Source Voltage | 40 V |
| Typical Turn-Off Delay Time: | 8 ns |
| Id - Continuous Drain Current: | 250 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 150 mS |
| Rds On - Drain-Source Resistance: | 8 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |