VN2450N3-G, Trans MOSFET N-CH Si 500V 0.2A 3-Pin TO-92 Bag
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8002187387
- Артикул
- VN2450N3-G
- Бренд
- Microchip Technology
- Type:
- FET
- Brand:
- Microchip Technology
- FET Type
- N-Channel
- Packaging
- Bulk
Цена по запросу
(от 250 ₽)
Минимальный заказ: 125 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор МОП n-канальный, 500В, 500мА, 1Вт, TO92
Технические параметры
| Type: | FET |
| Brand: | Microchip Technology |
| FET Type | N-Channel |
| Packaging | Bulk |
| Vgs (Max) | В±20V |
| Fall Time: | 20 ns |
| Packaging: | Bulk |
| Rise Time: | 10 ns |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 1 |
| Part Status | Active |
| Technology: | Si |
| Manufacturer | Microchip Technology |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Microchip |
| Mounting Type | Through Hole |
| Package/Case: | TO-92-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | TO-226-3, TO-92-3(TO-226AA) |
| Mounting Style: | Through Hole |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Factory Pack Quantity: | 1000 |
| Rds On (Max) @ Id, Vgs | 13 Ohm @ 400mA, 10V |
| Особенности | высоковольтный |
| Pd - Power Dissipation: | 1 W |
| Power Dissipation (Max) | 1W(Ta) |
| Supplier Device Package | TO-92-3 |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 10 ns |
| Typical Turn-Off Delay Time: | 25 ns |
| Drain to Source Voltage (Vdss) | 500V |
| Id - Continuous Drain Current: | 200 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 13 Ohms |
| Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 25V |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Current - Continuous Drain (Id) @ 25В°C | 200mA(Tj) |
| Пороговое напряжение на затворе | 3 |
| Максимальное напряжение сток-исток Uси,В | 500 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.2 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |