VN2410L-G-P013, MOSFETs N-CH Enhancmnt Mode MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004716281
- Артикул
- VN2410L-G-P013
- Бренд
- Microchip Technology
- Brand:
- Microchip Technology
- Product:
- MOSFET Small Signals
- Fall Time:
- 24 ns
- Packaging:
- Ammo Pack
Цена по запросу
(от 224,85 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Microchip Technology |
| Product: | MOSFET Small Signals |
| Fall Time: | 24 ns |
| Packaging: | Ammo Pack |
| Rise Time: | 8 ns |
| Вес, г | 0.45 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Microchip |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-92-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Особенности | - |
| Pd - Power Dissipation: | 1 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 8 ns |
| Typical Turn-Off Delay Time: | 23 ns |
| Id - Continuous Drain Current: | 190 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 10 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 240 V |
| Vgs th - Gate-Source Threshold Voltage: | 800 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |