VN10KN3-G, Транзистор N-MOSFET, полевой, 60В, 0,75А, 1Вт, TO92
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- Код товара
- 8062876608
- Артикул
- VN10KN3-G
- Бренд
- Microchip Technology
- Case
- TO92
- Type:
- FET
- Width
- 4.06mm
- Brand:
- Microchip Technology
Цена по запросу
(от 91 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
N-канальный МОП-транзистор Microchip Technology с сквозным креплением - это продукт нового поколения с сопротивлением сток-исток 5 Ом при напряжении затвор-исток 10 В.
Технические параметры
| Case | TO92 |
| Type: | FET |
| Width | 4.06mm |
| Brand: | Microchip Technology |
| Series | VN10K |
| Mounting | THT |
| Pin Count | 3 |
| Packaging: | Bulk |
| Вес, г | 0.22 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | MICROCHIP TECHNOLOGY |
| Package Type | TO-92 |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Drain current | 0.31A |
| Manufacturer: | Microchip |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Configuration: | Single |
| Kind of channel | enhanced |
| Kind of package | bulk |
| Mounting Style: | Through Hole |
| Package / Case: | TO-92-3 |
| Transistor Type: | 1 N-Channel |
| Power dissipation | 1W |
| Product Category: | MOSFET |
| Type of transistor | N-MOSFET |
| Gate-source voltage | ±30V |
| Number of Channels: | 1 Channel |
| On-state resistance | 5Ω |
| Drain-source voltage | 60V |
| Pulsed drain current | 1A |
| Transistor Polarity: | N-Channel |
| Forward Diode Voltage | 0.8V |
| Power Dissipation (Pd) | 1W |
| Pd - Power Dissipation: | 1 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 1 W |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Maximum Gate Source Voltage | 30 V |
| Number of Elements per Chip | 1 |
| Input Capacitance (Ciss@Vds) | 60pF@25V |
| Maximum Drain Source Voltage | 60 V |
| Continuous Drain Current (Id) | 310mA |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 310 mA |
| Maximum Gate Threshold Voltage | 2.5V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 0.8V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 100 mmho |
| Maximum Drain Source Resistance | 7.5 Ω |
| Maximum Continuous Drain Current | 310 mA |
| Rds On - Drain-Source Resistance: | 5 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 800 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |