UT6J3TCR, MOSFETs -20V Pch+Pch Si MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062471136
- Артикул
- UT6J3TCR
- Бренд
- Rohm
- Brand:
- ROHM Semiconductor
- Fall Time:
- 35 ns, 35 ns
- Rise Time:
- 30 ns, 30 ns
- Вес, г
- 0.78
Цена по запросу
(от 112,13 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | ROHM Semiconductor |
| Fall Time: | 35 ns, 35 ns |
| Rise Time: | 30 ns, 30 ns |
| Вес, г | 0.78 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | ROHM Semiconductor |
| Product Type: | MOSFETs |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Package / Case: | HUML2020L-8 |
| Part # Aliases: | UT6J3 |
| Transistor Type: | 2 P-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 8.5 nC |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 2 W |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Typical Turn-On Delay Time: | 10 ns, 10 ns |
| Typical Turn-Off Delay Time: | 120 ns, 120 ns |
| Id - Continuous Drain Current: | 3 A |
| Maximum Operating Temperature: | +150 C |
| Forward Transconductance - Min: | 4 S, 4 S |
| Rds On - Drain-Source Resistance: | 60 mOhms, 60 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |